2N6660 PDF

This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. For pricing and availability, contact Microchip Local Sales.

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This com-. Characteristic of all MOS struc-. Package Types. Case: Drain. See Table for pin information. DSA-page 1. Drain-to-source voltage BV DSS. Drain-to-gate voltage BV DGS. Gate-to-source voltage Operating and Storage Temperature This is. Exposure to maximum rating conditions for extended periods. Min Typ Max Units Conditions. DC Parameters Note 1, unless otherwise stated.

Drain-to-source breakdown voltage. Gate threshold voltage. V GS th change with temperature. Gate body leakage current. Zero gate voltage drain current. V GS th. I GSS. I DSS. On-state drain current. Static drain-to-source on-state. AC Parameters Note 2. R DS ON. Forward transconductance. Input capacitance. Common source output capacitance. Reverse transfer capacitance. Turn-on time. Turn-off time. Diode Parameters.

C ISS. C OSS. C RSS. Diode forward voltage drop. Reverse recovery time. Temperature Ranges. Operating and Storage Temperature. DSA-page 2. Download 2N Datasheet. Description 2N is an enhancement-mode normally-off tran- sistor that utilizes a vertical DMOS structure and a well- proven silicon-gate manufacturing process. This com- bination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inher- ent in MOS devices.

Characteristic of all MOS struc- tures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very- low threshold voltage, high breakdown voltage, high- input impedance, low-input capacitance, and fast switching speeds are desired. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods may affect device reliability.

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