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Constructed in a single silicon chip, the LM uses active circuitry to buffer the in- ternal zener allowing the device to operate over a 0. The LM is available with a temperature coefficients of 0. This reference also has excellent long term stability and low noise. A new subsurface breakdown zener used in the LM gives lower noise and better long-term stability than conventional IC zeners.
Further the zener and temperature compensating transistor are made by a planar process so they are immune to problems that plague ordinary zeners. For example, there is virtually no voltage shift in zener voltage due to temperature cycling and the device is insensitive to stress on the leads.
The LM can be used in place of conventional zeners with improved performance. The low dynamic impedance simpli- fies biasing and the wide operating current allows the re- placement of many zener types. January 17, Precision Reference. General Description. The LM is a precision multi-current temperature-compen-.
Constructed in a single. LM is available with a temperature coefficients of 0. This reference also has excellent long term stability and. A new subsurface breakdown zener used in the LM gives. IC zeners. Further the zener and temperature compensating.
For example, there. The LM can be used in place of conventional zeners with. The low dynamic impedance simpli-. TO epoxy package. Connection Diagram. Typical Applications. Plastic Package TO Simple Reference. Bottom View. No Preview Available! Absolute Maximum Ratings Note 1. Distributors for availability and specifications. Reverse Breakdown Current. Forward Current. Electrical Characteristics Note 2.
Operating Temperature Range. Storage Temperature Range. Soldering Information. TO package: 10 sec. Reverse Breakdown Voltage. Reverse Breakdown Change. Reverse Dynamic Impedance. Note 3. RMS Noise. Long Term Stability. Temperature Coefficient. Change In Reverse Breakdown. Min Typ Max. Operating Ratings indicate conditions for which the device. For operating at elevated temperature. W junction to ambient with 0.
Note 3: These changes are tested on a pulsed basis with a low duty-cycle. For changes versus temperature, compute in terms of tempco. Note National Semiconductor Electronic Components Datasheet. Part Number. View PDF for Mobile. National Semiconductor. Sharp Electrionic Components.
LM329 Reference. Datasheet pdf. Equivalent
The LM temperature compensated 6. The device achieves low dynamic impedance by incorporating a high gain shunt regulator around the Zener. The excellent noise performance of the device is achieved by using a "buried Zener" design which eliminates surface noise phenomenon associated with ordinary Zeners. To serve a wide variety of applications, the LM is available in several temperature coefficient grades and two package styles. A 20mA positive current source application is shown below.
6.9V Precision Voltage Reference
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