Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. The device supports high-performance commands for clock frequency up to 75MHz.
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Polling during a Write, Program or Erase cycle. List of tables Table 1. Signal names. Protected area sizes. Memory organization. Instruction set. Status Register format. Protection modes. Power-up timing and V Table 9. Absolute maximum ratings. Operating conditions. List of figures Figure 1. Logic diagram. SO16 connections.
Bus master and memory devices on the SPI bus. SPI modes supported. Hold condition activation. Block diagram. The memory can be programmed 1 to bytes at a time, using the Page Program instruction. The memory is organized as 32 sectors, each containing pages. Each page is bytes wide PCB See Package mechanical section for package dimensions, and how to identify pin Figure 3.
See Package mechanical section for package dimensions, and how to identify pin V supply voltage the supply voltage. Serial Data output Q line at a time, the other devices are high impedance. Resistors R represented in that the M25P16 is not selected if the Bus Master leaves the S line in the high impedance state. Figure 5. This can be achieved either a sector at a time, using the Sector Erase SE instruction, or throughout the entire memory, using the Bulk Erase BE instruction The environments where non-volatile memory devices are used can be very noisy.
No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25P16 features the following data protection mechanisms: Power on reset and an internal timer t changes while the power supply is outside the operating specification This prevents the device from going back to the Hold condition. Figure 6. Memory organization The memory is organized as: 2 bytes 8 bits each 32 sectors Kbits, bytes each pages bytes each.
Each page can be individually programmed bits are programmed from 1 to 0. The device is sector or bulk erasable bits are erased from but not page erasable. Table 3. All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected The device identification is assigned by the device manufacturer, and indicates the memory type in the first byte 20h , and the memory capacity of the device in the second byte 15h.
The status and control bits of the Status Register are as follows: 6. After the Write Enable The instruction sequence is shown in The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to h, allowing the read sequence to be continued indefinitely Figure It can also be used as a software protection mechanism, while the device Deep Power-down mode.
The instruction can also be used to read, on Serial Data output Q , the old-style 8-bit electronic signature, whose value for the M25P16 is 14h.
The value of the 8-bit electronic signature, for the M25P16, is 14h. Release from Deep Power-down RES instruction sequence Instruction D High Impedance Q Driving Chip Select S High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit electronic signature has been transmitted for the first time as shown in still ensures that the device is put into Standby Power mode Power-up and power-down At power-up and power-down, the device must not be selected that is Chip Select S must follow the voltage applied min at power-up, and then for a further delay These parameters are characterized only.
The Status Register contains 00h all Status Register bits are 0. Program, Erase and Write commands are rejected by the device The minimum voltage may reach the value for no more than 20 ns during transitions. The parameters in the DC and AC characteristic tables that follow are derived from tests performed under the Table AC characteristics Applies only to products made with nm technology Test conditions specified in Symbol Alt. AC characteristics Symbol Alt.
Page Program cycle time bytes Page Program cycle time n bytes, where Page Program cycle time n bytes, where A Figure Package mechanical In order to meet environmental requirements, Numonyx offers these devices in RoHS compliant packages, which have a Lead-free second level interconnect. The maximum ratings related to soldering conditions are also marked on the inner box label The circle in the top view of the package indicates the position SO8N — 8 lead plastic small outline, mils body width, package outline Drawing is not to scale.
SO8N — 8 lead plastic small outline, mils body SO8W — 8 lead plastic small outline, mils body width, package outline 1. Drawing is not to scale. SO8 wide — 8 lead plastic small outline, mils body width, package mechanical data Symbol Typ SO16 wide — lead plastic small outline, mils body width, package outline SO-H 1. SO16 wide — lead plastic small outline, mils body width, Package is not to scale. Secure options are available upon customer request. Not for new design, please use MP package version of the device.
Example: M25P16 — Numonyx strongly recommends the use of the Automotive Grade devices AutoGrade 6 and Grade 3 for use in an automotive environment. Note: For a list of available options speed, package, etc. Tested Parts from the non Auto Tested parts.
Note: Numonyx strongly recommends the use of the Automotive Grade devices Auto Grade 6 and automotive envirnoment. Please ask your Numonyx sales office for a copy. Note 2 added to scheme. SO8N package specifications updated see Table Small text changes.
Modified maximum value for t nm technology. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility Numonyx may make changes to specifications and product descriptions at any time, without notice. About Contact Requests Pricing Request parts.
My request: 0 parts. Bonase Electronics HK Co. Part Number:. Request R. Page Page 3 SRWD bit. Page 9 V supply voltage the supply voltage. Page 15 Figure 6. Page 28 Figure Page 34 Power-up and power-down At power-up and power-down, the device must not be selected that is Chip Select S must follow the voltage applied min at power-up, and then for a further delay Page 38 Table Page 39 Table
M25P16-VMP6G - 16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface
M25P16-VMN6TP NUMONYX, M25P16-VMN6TP Datasheet
Datasheet ID: M25P16-VMN6P 648282